s mhop microelectronics c orp. a STS2620A absolute maximum ratings ( t a =25 c unless otherwise noted ) ver1.2 www.samhop.com.tw nov,24,2010 1 details are subject to change without notice. dual enhancement mode field effect transistor (n and p channel ) s o t 2 6 t o p v i e w g 1 g 2 d 1 d 2 1 2 3 6 5 4 g 1 d 1 s 1 g 2 d 2 s 2 product summary (n-channel) v dss i d r ds(on) (m @ vgs=2.5v 50 @ vgs=4.5v product summary (p-channel) v dss i d r ds(on) (m @ vgs=-2.5v 106 @ vgs=-4.5v symbol v ds v gs i dm a i d units parameter 20 2.5 8 v v 10 gate-source voltage drain-source voltage n-channel drain current-continuous -pulsed b a t c =25 c -20 -2 -7 10 p-channel t c =70 c a 2 -1.6 a 125 c/w thermal characteristics thermal resistance, junction-to-ambient r ja a w p d c 1 -55 to 150 t c =25 c maximum power dissipation operating junction and storage temperature range t j , t stg 0.64 w t c =70 c a s 2 s 1 nch pch
4 symbol min typ max units bv dss 20 v 1 i gss 100 na v gs(th) 0.5 v 40 g fs 11 s v sd c iss 248 pf c oss 83 pf c rss 67 pf q g 8.8 nc 14.1 nc q gs 18.1 nc q gd 9 t d(on) 5.6 ns t r 1.2 ns t d(off) 2.5 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source charge v dd =10v i d =1a v gs =4.5v r gen =6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =4.5v , i d =2.5a v ds =5v,i d =2.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =16v , v gs =0v v gs =10v,v ds =0v zero gate voltage drain current gate-body leakage current off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =250ua reverse transfer capacitance on characteristics v gs =2.5v , i d =2a 50 56 76 m ohm c f=1.0mhz c v ds =10v,i d =2.5a, v gs =4.5v drain-source diode characteristics and maximum ratings v gs =0v,i s =1a 0.8 1.2 v STS2620A ver1.2 www.samhop.com.tw nov,24,2010 2 0.7 1.5 n-channel electrical characteristics ( t c =25 c unless otherwise noted )
4 symbol min typ max units bv dss -20 v 1 i gss 100 na v gs(th) -0.5 v 85 g fs 6.5 s v sd c iss 235 pf c oss 88 pf c rss 54 pf q g 42 nc 137 nc q gs 312 nc q gd 218 t d(on) 3.8 ns t r 0.4 ns t d(off) 1.8 ns t f ns gate-drain charge v ds =-10v,v gs =0v switching characteristics gate-source charge v dd =-10v i d =-1a v gs =-4.5v r gen =6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =-4.5v , i d =-2a v ds =-5v , i d =-2a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =-250ua v ds =-16v , v gs =0v v gs =10v,v ds =0v zero gate voltage drain current gate-body leakage current off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =-250ua reverse transfer capacitance on characteristics v gs =-2.5v , i d =-1a 106 147 198 m ohm c f=1.0mhz c v ds =-10v,i d =-2a, v gs =-4.5v drain-source diode characteristics and maximum ratings v gs =0v,i s =1a -0.8 -1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ STS2620A ver1.2 www.samhop.com.tw nov,24,2010 3 _ -0.9 -1.5 p-channel electrical characteristics ( t c =25 c unless otherwise noted )
STS2620A ver1.2 www.samhop.com.tw nov,24,2010 4 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) c, capacitance (pf) r ds(on) , on-resistance normalized v ds ,drain-tosourcevoltage(v) tj, junction temperature( c) figure 3. c apacitance figure 4. on-resistance variation with temperature 25 c 15 12 9 6 3 0 0.0 0.6 1.2 1.8 2.4 3.0 3.6 tj=125 c -55 c 20 16 12 8 4 0 0.5 1 1.5 2 2.5 3 v gs =4v v gs =2v v gs =3v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 ciss coss 500 400 300 200 100 0 crss 2.2 1.8 1.4 1.0 0.6 0.2 0 -50 0 50 100 125 -25 25 75 v gs =4.5v i d =2.7a n-channel vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation tj, junction temperature( c) figure 6. breakdown voltage variation with temperature with temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 1.3 1.2 1.1 1.0 0.9 0.8 0.7 i d =250ua v ds =v gs i d =250ua
STS2620A ver1.2 www.samhop.com.tw nov,24,2010 5 i d , drain current(a) v sd ,bodydiodeforwardvoltage(v) figure 7. transconductance variation figure 8. body diode forward voltage with drain current variation with source current g fs , t rans conductance (s ) is, s ource-drain current (a) 10 8 6 4 12 0 0 3 6 9 12 15 2 v ds =5v 20 10 0 1 0.4 0.8 1.2 1.6 2.0 2.4 t j =25 c v gs ,gatetosourcevoltage(v) qg, total gate charge (nc) v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) 4 5 3 2 1 0 0 1 23 4 5678 v ds =4.5v i d =2.5a 50 10 1 0.1 0.03 0.1 1 10 20 50 r ds ( on ) limit v gs =4.5v single pulse tc=25 c 10ms 100ms 1s d c figure 9. gate charge figure 10. maximun safe operating area square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance 0.01 0.1 1 2 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 p dm t 1 t 2 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datasheet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th single pulse 0.01 0.5 0.2 0.1 0.05 0.02
STS2620A ver1.2 www.samhop.com.tw nov,24,2010 6 tj( c) -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) c, capacitance (pf) r ds(on) , on-resistance normalized -v ds , drain-to s ource voltage (v ) tj, junction temperature( c) figure 3. c apacitance figure 4. on-resistance variation with temperature p-channel vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation tj, junction temperature( c) figure 6. breakdown voltage variation with temperature with temperature 0510 15202530 ciss coss 500 400 300 200 100 0 crss 25 c 15 12 9 6 3 0 0.0 0.8 1.6 2.4 3.2 4.0 tj=125 c -55 c 4.8 2.2 1.8 1.4 1.0 0.6 0.2 0 -50 0 50 100 125 -25 25 75 v gs =-4.5v i d =-2.0a 20 16 12 8 4 0 0 0.5 1 1.5 2 2.5 3 v gs =-6v v gs =-2v v gs =-10v v gs =-3v v gs =-4v v gs =-4.5v 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 v ds =v gs i d =-250ua -50 -25 0 25 50 75 100 125 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua
STS2620A ver1.2 www.samhop.com.tw nov,24,2010 7 -i d , drain current(a) -v sd ,bodydiodeforwardvoltage(v) figure 7. transconductance variation figure 8. body diode forward voltage with drain current variation with source current g fs , t rans conductance (s ) is, s ource-drain current (a) -v gs , g ate to s ource v oltage (v ) qg, total gate charge (nc) -v ds , drain-s ource v oltage (v ) -i d , drain c urrent (a) figure 9. gate charge figure 10. maximun safe operating area square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance 20 10 0 1 0.4 0.8 1.2 1.6 2.0 2.4 t j =25 c 7.5 6 4.5 3 9 0 0 3 6 9 12 15 1.5 v ds =-5v 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 v ds =-4.5v i d =-2.0a 5 13 10 1 0.1 0.03 0.1 1 10 20 50 r d s (on) limit v gs =-4.5v single pulse tc=25 c 10ms 100m s 1s d c 2 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 0.01 0.1 1 p dm t 1 t 2 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datas heet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th single pulse 0.01 0.02 0.05 0.1 0.2 0.5
STS2620A www.samhop.com.tw nov,24,2010 8 package outline dimensions sot 26 l detail "a" millimeters inches symbols d e 2.700 3.100 2.500 3.100 e1 1.400 1.800 e e1 b 0.300 0.500 c 0.090 0.200 a a1 0.000 0.130 0.700 1.120 l1 l l1 0 o 10 o 0.106 0.122 0.098 0.122 0.055 0.071 0.012 0.020 0.004 0.008 0.000 0.005 0.028 0.044 0 o 10 o min max min max 0.950 ref. d e1 e e1 e b 1 2 3 6 54 a a1 1.900 ref. 0.037 ref. 0.075 ref. 0.300 0.550 0.012 0.022 0.350 0.800 0.014 0.031 detail "a" ver 1.2
STS2620A www.samhop.com.tw nov,24,2010 9 sot 26 tape and reel data sot 26 carrier tape sot 26 reel sot 26 a 4.00 2.00 0.10 + 0.05 4.00 + 0.10 + 1.00 +0.10 0.00 1.50 +0.10 0.00 1.75 0.10 + 3.50 0.05 + 8.0 + 0.30 a b b 0.25 + 0.05 r0.3 5 max r0.3 ko 1.5 + 0.1 bo 3.2 + 0.1 section a-a 3.3 + 0.1 5 max r0.3 r0.3 section b-b 178.0 + 0.5 60 + 0.5 9.0 1.50 +1.5 -0 2.2 + 0.5 10.6 13.5 + 0.5 scale 2:1 ver 1.2
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